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| SMD Type High-Current Switching Applications 2SB1203 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low collector-to-emitter saturation voltage. High current and high fT. +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.15 0.50 -0.15 Fast switching speed. 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation TC = 25 Jumction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP PC Rating -60 -50 -6 -5 -8 1 20 150 -55 to +150 Unit V V V A A W W 3.80 Excellent linearity of hFE. www.kexin.com.cn 1 SMD Type 2SB1203 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Collector-emitter saturation voltage Base-to-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-to-base breakdown voltage Turn-on time Symbol ICBO IEBO hFE fT Cob Testconditons VCB = -40V , IE = 0 VEB = -4V , IC = 0 VCE = -2V , IC = -0.5A VCE = -2V , IC = -4A VCE = -5V , IC = -1A VCB = -10V , f = 1MHz Transistors Min Typ Max -1 -1 Unit iA iA 70 35 130 60 -280 -0.95 -60 -50 -6 50 400 MHz pF -550 -1.3 mV V V V V ns VCE(sat) IC = -3A , IB = -0.15A VBE(sat) IC = -3A , IB = -0.15A V(BR)CBO IC = -10iA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10iA , IC = 0 ton Storage time tstg 450 ns Fall time tf 20 ns hFE Classification Rank hFE Q 70 140 R 100 200 S 140 280 T 200 400 2 www.kexin.com.cn |
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